SI6463BDQ-T1-GE3
MOSFET P-CH 20V 6.2A 8-TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI6463BDQ-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for high-efficiency power management applications. This device features a maximum drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 6.2 A at 25°C (Ta). With a low on-resistance (Rds On) of 15 mOhm at 7.4 A and 4.5 Vgs, it minimizes conduction losses. The device exhibits a gate charge (Qg) of 60 nC maximum at 5 Vgs and a gate-source threshold voltage (Vgs(th)) of 800 mV maximum at 250 µA. Mounting is via surface mount in an 8-TSSOP package. This component is commonly utilized in consumer electronics, industrial automation, and automotive sectors. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 7.4A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
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