SI6463BDQ-T1-E3
MOSFET P-CH 20V 6.2A 8-TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix presents the SI6463BDQ-T1-E3, a P-Channel TrenchFET® MOSFET designed for efficient power switching applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 6.2A at 25°C. The low on-resistance of 15mOhm is achieved at 7.4A and 4.5V Vgs, indicating high-efficiency operation. With a gate charge of 60nC (max) at 5V, it is suitable for high-frequency switching. The device is housed in an 8-TSSOP package, facilitating surface mounting and integration into compact designs. The threshold voltage is specified at 800mV (max) for 250µA. This MOSFET is commonly utilized in power management, battery charging, and load switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 7.4A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
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