SI6459BDQ-T1-E3
MOSFET P-CH 60V 2.2A 8TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI6459BDQ-T1-E3, offers a 60V drain-to-source voltage and a continuous drain current of 2.2A at 25°C. This surface mount device in an 8-TSSOP package features a maximum on-resistance of 115mOhm at 2.7A and 10V Vgs, with a drive voltage range of 4.5V to 10V. The device boasts a maximum gate charge of 22nC at 10V and a power dissipation of 1W. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power management and industrial automation. The SI6459BDQ-T1-E3 is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
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