SI6443DQ-T1-GE3
MOSFET P-CH 30V 7.3A 8TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI6443DQ-T1-GE3 is a P-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 30 V. This device offers a continuous drain current (Id) of 7.3A at 25°C and a maximum power dissipation of 1.05W. Featuring a low on-resistance (Rds On) of 12mOhm at 8.8A and 10V, this MOSFET is designed for efficient power switching. The gate charge (Qg) is 60 nC at 5V, and it operates with a gate-source voltage (Vgs) range of ±20V. The threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. This component is housed in an 8-TSSOP package, suitable for surface mounting. The SI6443DQ-T1-GE3 is commonly utilized in power management and switching applications across various industries. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 8.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.05W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |