SI6443DQ-T1-E3
MOSFET P-CH 30V 7.3A 8TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI6443DQ-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7.3A at 25°C. With a low on-resistance (Rds On) of 12mOhm at 8.8A and 10V Vgs, it minimizes conduction losses. The device operates with a gate-to-source drive voltage range from 4.5V to 10V and has a maximum gate charge (Qg) of 60 nC at 5V. Housed in an 8-TSSOP package, it supports surface mounting and operates across a temperature range of -55°C to 150°C. Key applications include power switching and battery management in consumer electronics and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 8.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.05W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |