SI6435ADQ-T1-GE3
MOSFET P-CH 30V 4.7A 8-TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI6435ADQ-T1-GE3, offers a 30 V drain-to-source voltage and a continuous drain current of 4.7 A at 25°C (Ta). This device features a low on-resistance of 30 mOhm maximum at 5.5 A and 10 V. The gate charge is specified at 20 nC maximum at 5 V, with a gate threshold voltage of 1 V minimum at 250 µA. Packaged in an 8-TSSOP (0.173", 4.40mm width) on cut tape, this MOSFET is designed for surface mount applications. Its performance characteristics make it suitable for power management solutions in sectors such as consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
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