SI6435ADQ-T1-E3
MOSFET P-CH 30V 4.7A 8-TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI6435ADQ-T1-E3 is a P-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current capability of 4.7A at 25°C. This device features low on-resistance, specified at 30mOhm maximum at 5.5A and 10V Vgs. The gate charge is a maximum of 20nC at 5V Vgs, and the threshold voltage is a minimum of 1V at 250µA. The SI6435ADQ-T1-E3 is housed in an 8-TSSOP package, measuring 4.40mm in width, and is supplied in cut tape. This component is suitable for applications in power management, consumer electronics, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
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