SI6433BDQ-T1-GE3
MOSFET P-CH 12V 4A 8TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel Power MOSFET, part number SI6433BDQ-T1-GE3, features a 12V drain-source voltage and a continuous drain current capability of 4A at 25°C. This device offers a maximum on-resistance of 40mOhm at 4.8A and 4.5V Vgs, with a 2.5V to 4.5V drive voltage range. The gate charge is specified at a maximum of 15 nC at 4.5V. Designed for efficient power management, it dissipates up to 1.05W at 25°C and operates within a temperature range of -55°C to 150°C. The SI6433BDQ-T1-GE3 is supplied in an 8-TSSOP package, suitable for surface mounting applications. This component finds utility in various demanding electronic systems, including automotive and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.05W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
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