SI6433BDQ-T1-E3
MOSFET P-CH 12V 4A 8TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI6433BDQ-T1-E3 is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain current (Id) of 4A at 25°C. The Rds(On) is specified at a maximum of 40mOhm at 4.8A and 4.5V Vgs. The device operates with a Gate-Source Voltage (Vgs) range up to ±8V, with a threshold voltage (Vgs(th)) of 1.5V at 250µA. Key characteristics include a Gate Charge (Qg) of 15 nC maximum at 4.5V Vgs and a maximum power dissipation of 1.05W (Ta). This MOSFET is housed in an 8-TSSOP package and is supplied on tape and reel. Its performance profile makes it suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.05W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
