SI6423DQ-T1-BE3
P-CHANNEL 12-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, part number SI6423DQ-T1-BE3, offers a 12V drain-source voltage and 8.2A continuous drain current at 25°C. This device features a low on-resistance of 8.5mOhm at 4.5V Vgs and 9.5A Id, with a gate threshold voltage of 800mV at 400µA. The SI6423DQ-T1-BE3 is constructed using MOSFET technology and is housed in an 8-TSSOP package for surface mounting. Drive voltages range from 1.8V to 4.5V. Typical applications include power management and switching circuits within the automotive and industrial sectors. The operating temperature range is -55°C to 150°C. This component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 9.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.05W (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 400µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 5 V |
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