SI6410DQ-T1-E3
MOSFET N-CH 30V 8TSSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI6410DQ-T1-E3 is an N-Channel Power MOSFET designed for efficient power management. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 7.8A at 25°C with a maximum power dissipation of 1.5W. The low on-resistance of 14mOhm at 7.8A and 10V gate-source voltage, achieved through TrenchFET technology, minimizes conduction losses. It operates with gate drive voltages between 4.5V and 10V, and has a maximum gate charge of 33nC at 5V. The device is housed in an 8-TSSOP package, suitable for surface mounting. This MOSFET is utilized in applications including automotive, industrial automation, and consumer electronics where high efficiency and compact design are critical. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 5 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
