SI5913DC-T1-GE3
MOSFET P-CH 20V 4A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix LITTLE FOOT® P-Channel MOSFET, part number SI5913DC-T1-GE3, offers a 20V drain-source voltage and a continuous drain current of 4A at 25°C (Tc). This device features a low on-resistance of 84mOhm maximum at 3.7A and 10V (Vgs). With a gate charge of 12nC maximum at 10V, it's suitable for applications requiring efficient switching. The 1206-8 ChipFET™ package provides a compact footprint for surface mounting. It includes an isolated Schottky diode and operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 1.7W (Ta) and 3.1W (Tc). This component finds utility in consumer electronics and industrial automation.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 84mOhm @ 3.7A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.7W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 10 V |
Request a Quote
Clients Also Buy
SI4816BDY-T1-E3
MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
SIA817EDJ-T1-GE3
MOSFET P-CH 30V 4.5A PPAK SC70-6
SIA811ADJ-T1-GE3
MOSFET P-CH 20V 4.5A PPAK SC70-6
