SI5857DU-T1-GE3
MOSFET P-CH 20V 6A PPAK CHIPFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix LITTLE FOOT® SI5857DU-T1-GE3 is a P-Channel MOSFET designed for efficient power switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C (Tc). The PowerPAK® ChipFET™ Single package offers a compact surface mount solution with excellent thermal performance, dissipating up to 10.4W at 25°C (Tc). Key electrical characteristics include a maximum Rds(on) of 58mOhm at 3.6A and 4.5V, and a gate charge (Qg) of 17nC at 10V. Integrated Schottky diode functionality is also present. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 3.6A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2.3W (Ta), 10.4W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFET™ Single |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 10 V |
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