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SI5857DU-T1-E3

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SI5857DU-T1-E3

MOSFET P-CH 20V 6A PPAK CHIPFET

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix LITTLE FOOT® P-Channel MOSFET, part number SI5857DU-T1-E3, is a single MOSFET in a PowerPAK® ChipFET™ Single package. This device features a 20V drain-source voltage and a continuous drain current of 6A at 25°C (Tc). The P-Channel MOSFET technology offers a low on-resistance of 58mOhm maximum at 3.6A and 4.5V Vgs. Key parameters include a gate charge of 17nC maximum at 10V and input capacitance of 480pF maximum at 10V. Drive voltages are specified as 2.5V and 4.5V for maximum and minimum Rds On, respectively. The device incorporates a Schottky Diode (Isolated) and operates across a temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 2.3W (Ta) and 10.4W (Tc). This component is suitable for applications in automotive and industrial sectors.

Additional Information

Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® ChipFET™ Single
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Rds On (Max) @ Id, Vgs58mOhm @ 3.6A, 4.5V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2.3W (Ta), 10.4W (Tc)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackagePowerPAK® ChipFET™ Single
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds480 pF @ 10 V

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