SI5856DC-T1-E3
MOSFET N-CH 20V 4.4A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI5856DC-T1-E3 is an N-Channel Power MOSFET designed for efficient switching applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) rating of 4.4A at 25°C, with a maximum power dissipation of 1.1W (Ta). The low Rds(on) of 40mOhm at 4.4A and 4.5V Vgs, coupled with a typical gate charge of 7.5 nC at 4.5V, ensures high performance in demanding environments. The SI5856DC-T1-E3 utilizes advanced trench technology for reduced on-resistance and improved thermal management. It is supplied in an 8-SMD, Flat Leads (1206-8 ChipFET™) package, suitable for surface mounting. This component includes an integrated Schottky diode, providing isolation and enhanced protection. Operating temperature ranges from -55°C to 150°C (TJ). Applications include power management, battery charging, and mobile devices.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.4A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V |
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