SI5855CDC-T1-E3
MOSFET P-CH 20V 3.7A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix LITTLE FOOT® SI5855CDC-T1-E3 is a P-Channel Power MOSFET designed for demanding applications. This component features a 20V Vdss rating and a continuous drain current of 3.7A (Tc). The Rds(On) is specified at a maximum of 144mOhm at 2.5A and 4.5V Vgs, with drive voltages ranging from 1.8V to 4.5V. The device offers a low gate charge of 6.8 nC (Max) at 5V Vgs and an input capacitance of 276 pF (Max) at 10V Vds. It includes an isolated Schottky diode and is packaged in an 8-SMD, Flat Leads (1206-8 ChipFET™) format, supplied on tape and reel. Power dissipation is rated at 1.3W (Ta) and 2.8W (Tc). This MOSFET is utilized across various industries including industrial, automotive, and consumer electronics for power management and switching functions. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 144mOhm @ 2.5A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.3W (Ta), 2.8W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 276 pF @ 10 V |