SI5853DDC-T1-E3
MOSFET P-CH 20V 4A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix LITTLE FOOT® P-Channel MOSFET, part number SI5853DDC-T1-E3. This device features a 20V drain-source voltage and a continuous drain current capability of 4A (Tc). Designed for surface mount applications in an 8-SMD, Flat Leads (1206-8 ChipFET™) package, it offers a low on-resistance of 105mOhm at 2.9A and 4.5V Vgs. The P-channel MOSFET includes an integrated Schottky diode for enhanced performance. Typical applications include power management and switching circuits across various industrial sectors. Key electrical parameters include a maximum gate charge of 12 nC at 8V Vgs and input capacitance of 320 pF at 10V Vds. Power dissipation is rated at 1.3W (Ta) and 3.1W (Tc). Operating temperature range is -55°C to 150°C.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2.9A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.3W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 320 pF @ 10 V |