SI5853DC-T1-E3
MOSFET P-CH 20V 2.7A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix LITTLE FOOT® P-Channel MOSFET, part number SI5853DC-T1-E3, offers a 20V drain-source voltage rating and a continuous drain current capability of 2.7A at 25°C (Ta). This device features a low on-resistance of 110mOhm maximum at 2.7A and 4.5V Vgs. The gate threshold voltage is 1V maximum at 250µA, with a maximum gate-source voltage of ±8V. It incorporates an isolated Schottky diode and has a gate charge of 7.7 nC maximum at 4.5V Vgs. The SI5853DC-T1-E3 is housed in an 8-SMD, Flat Leads (1206-8 ChipFET™) package with a surface mount configuration. Typical applications include power management and switching in consumer electronics and industrial systems. This component operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 2.7A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 4.5 V |
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