SI5853CDC-T1-E3
MOSFET P-CH 20V 4A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix LITTLE FOOT® P-Channel MOSFET, part number SI5853CDC-T1-E3, offers a 20V drain-source voltage and 4A continuous drain current. This 1206-8 ChipFET™ device features a low on-resistance of 104mOhm at 2.5A and 4.5V Vgs. The P-channel enhancement mode MOSFET is designed for surface mounting with a compact 8-SMD, Flat Leads package. Key parameters include a maximum gate charge of 11 nC at 8V Vgs and a maximum input capacitance of 350 pF at 10V Vds. The device operates across a wide temperature range of -55°C to 150°C and includes an isolated Schottky diode. This component is suitable for applications in consumer electronics, industrial controls, and power management systems.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 2.5A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.5W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 10 V |