SI5499DC-T1-GE3
MOSFET P-CH 8V 6A 1206-8 CHIPFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI5499DC-T1-GE3, offers an 8V drain-source voltage rating and continuous drain current capability of 6A at 25°C (Tc). This device features a low Rds(on) of 36mOhm at 5.1A and 4.5V Vgs. Designed for efficient switching, it operates with drive voltages ranging from 1.5V to 4.5V and has a maximum gate-source voltage of ±5V. The SI5499DC-T1-GE3 is housed in an 8-SMD, Flat Leads package conforming to the 1206-8 ChipFET™ footprint, suitable for surface-mount applications. Power dissipation is rated at 2.5W (Ta) and 6.2W (Tc). This component finds application in power management solutions across various industries, including consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 5.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 6.2W (Tc) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1290 pF @ 4 V |