SI5499DC-T1-E3
MOSFET P-CH 8V 6A 1206-8 CHIPFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI5499DC-T1-E3 is a P-channel TrenchFET® MOSFET designed for efficient power switching. This device features a Drain-to-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 6A at 25°C (Tc). With a maximum Rds(on) of 36mOhm at 5.1A and 4.5V Vgs, it offers low conduction losses. The device operates with a gate drive range of 1.5V to 4.5V, and a maximum gate-source voltage (Vgs) of ±5V. It supports a gate charge (Qg) of 35 nC at 8V and an input capacitance (Ciss) of 1290 pF at 4V. This MOSFET is housed in an 8-pin 1206-8 ChipFET™ package, suitable for surface mount applications. Power dissipation is rated at 2.5W (Ta) and 6.2W (Tc). The SI5499DC-T1-E3 is utilized in applications across the consumer electronics and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 5.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 6.2W (Tc) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±5V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1290 pF @ 4 V |
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