SI5486DU-T1-GE3
MOSFET N-CH 20V 12A CHIPFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel 20V TrenchFET® PowerPAK® ChipFET™ SI5486DU-T1-GE3. This single N-channel power MOSFET offers a continuous drain current of 12A (Tc) and a drain-to-source voltage of 20V. Key specifications include a maximum on-resistance (Rds On) of 15mOhm at 7.7A and 4.5V Vgs, with a gate charge (Qg) of 54 nC at 8V Vgs. The device features an input capacitance (Ciss) of 2100 pF at 10V Vds. Designed for surface mounting in a PowerPAK® ChipFET™ Single package, it dissipates up to 31W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 7.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFET™ Single |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 10 V |