SI5486DU-T1-E3
MOSFET N-CH 20V 12A CHIPFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5486DU-T1-E3 is a N-Channel Power MOSFET designed for high-efficiency power switching applications. This TrenchFET® series device offers a 20V drain-source voltage rating and a continuous drain current capability of 12A (Tc). Key parameters include a low on-resistance of 15mOhm at 7.7A and 4.5V Vgs, and a gate charge of 54 nC maximum at 8V Vgs. The component features a 1.8V to 4.5V gate drive voltage range and boasts a maximum power dissipation of 31W at the case temperature. Packaged in a compact PowerPAK® ChipFET™ Single, suitable for surface mounting, this MOSFET is utilized in industries such as automotive and industrial power management. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 7.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFET™ Single |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 10 V |
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