SI5485DU-T1-E3
MOSFET P-CH 20V 12A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SI5485DU-T1-E3 is a P-Channel TrenchFET® MOSFET with a Drain-to-Source Voltage (Vdss) of 20V. This single FET features a continuous drain current (Id) of 12A at 25°C (Tc) and a maximum Rds(on) of 25mOhm at 5.9A and 4.5V Vgs. The device utilizes a PowerPAK® ChipFET™ Single package for surface mounting, offering excellent thermal performance with a maximum power dissipation of 31W at 25°C (Tc). Key parameters include a gate charge (Qg) of 42 nC at 8V Vgs and an input capacitance (Ciss) of 1100 pF at 10V Vds. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power management and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFET™ Single |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 10 V |
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