SI5482DU-T1-GE3
MOSFET N-CH 30V 12A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI5482DU-T1-GE3 is an N-Channel TrenchFET® MOSFET designed for demanding power applications. This single FET features a 30V drain-source voltage and a continuous drain current of 12A at 25°C (Tc). With a low on-resistance of 15mOhm at 7.4A and 10V Vgs, it minimizes conduction losses. The device offers a maximum gate charge of 51 nC at 10V and input capacitance of 1610 pF at 15V. Power dissipation capabilities are rated at 3.1W ambient and 31W case temperature. The SI5482DU-T1-GE3 utilizes the PowerPAK® ChipFET™ Single surface-mount package, suitable for automated assembly. Operating temperature range is -55°C to 150°C (TJ). This component is frequently found in power management, automotive, and industrial equipment.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 7.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFET™ Single |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1610 pF @ 15 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
