SI5481DU-T1-GE3
MOSFET P-CH 20V 12A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI5481DU-T1-GE3, offers a 20V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C (Tc). This surface mount device features a low on-resistance of 22mOhm maximum at 6.5A and 4.5V gate-source voltage, with a drive voltage range of 1.8V to 4.5V. The device is housed in a PowerPAK® ChipFET™ Single package, designed for efficient thermal management with a maximum power dissipation of 17.8W at 25°C (Tc). Key electrical parameters include a maximum gate charge of 50 nC at 8V Vgs and an input capacitance of 1610 pF at 10V Vds. This component is suitable for applications in automotive, industrial, and consumer electronics. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 6.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 17.8W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFET™ Single |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1610 pF @ 10 V |
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