SI5481DU-T1-E3
MOSFET P-CH 20V 12A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, part number SI5481DU-T1-E3, offers robust performance in a PowerPAK® ChipFET™ Single package. This TrenchFET® series device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). The Rds On is specified at a maximum of 22mOhm at 6.5A and 4.5V Vgs. Drive voltage ranges from 1.8V to 4.5V. Maximum gate charge (Qg) is 50 nC at 8V Vgs, with input capacitance (Ciss) at 1610 pF (max) at 10V Vds. Power dissipation is 3.1W (Ta) and 17.8W (Tc). The device operates across an extended temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel packaging. This component is suitable for applications including automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 6.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 17.8W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFET™ Single |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1610 pF @ 10 V |
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