SI5480DU-T1-GE3
MOSFET N-CH 30V 12A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5480DU-T1-GE3 is an N-Channel TrenchFET® MOSFET designed for power management applications. This single FET offers a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). Key performance characteristics include a maximum Rds(On) of 16mOhm at 7.2A and 10V Vgs, and a low gate charge (Qg) of 34 nC at 10V. The device supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V. With a maximum power dissipation of 31W at 25°C (Tc), it is suitable for demanding thermal environments. The SI5480DU-T1-GE3 is housed in a surface-mount PowerPAK® ChipFET™ Single package, compatible with Tape & Reel (TR) packaging. This component is frequently utilized in automotive and industrial power conversion systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFET™ Single |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 15 V |
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