SI5479DU-T1-GE3
MOSFET P-CH 12V 16A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI5479DU-T1-GE3 is a P-channel MOSFET with a drain-source voltage of 12V. This component offers low on-resistance of 21mOhm at 6.9A and 4.5V Vgs, with a maximum continuous drain current of 16A at 25°C (Tc). The device features a typical gate charge of 51 nC at 8V and input capacitance of 1810 pF at 6V. It is packaged in a PowerPAK® ChipFET™ Single, suitable for surface mounting. The operational temperature range is -55°C to 150°C. Power dissipation is rated at 3.1W (Ta) and 17.8W (Tc). This MOSFET is utilized in applications such as power management and high-efficiency switching in consumer electronics and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 6.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 17.8W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFET™ Single |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1810 pF @ 6 V |
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