SI5476DU-T1-GE3
MOSFET N-CH 60V 12A CHIPFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI5476DU-T1-GE3 is a 60V N-Channel Power MOSFET designed for demanding applications. This single FET, housed in a PowerPAK® ChipFET™ Single package, offers a continuous drain current of 12A (Tc) and a low on-resistance (Rds(on)) of 34mOhm at 4.6A and 10V Vgs. The device features a gate charge of 32 nC (max) at 10V and an input capacitance of 1100 pF (max) at 30V. With a maximum power dissipation of 31W (Tc), it is suitable for high-efficiency power conversion in industrial and automotive sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFET™ Single |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 30 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
