SI5476DU-T1-E3
MOSFET N-CH 60V 12A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5476DU-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for high-efficiency power switching applications. This device features a 60V drain-source voltage rating and supports a continuous drain current of 12A at 25°C (Tc). The low on-resistance of 34mOhm at 4.6A and 10V Vgs minimizes conduction losses, while the 31W power dissipation (Tc) capability ensures robust performance under load. With a gate charge of 32nC (max) and an input capacitance of 1100pF (max), the SI5476DU-T1-E3 facilitates efficient switching. It operates across a wide temperature range of -55°C to 150°C (TJ) and is housed in a compact PowerPAK® ChipFET™ Single surface mount package, suitable for demanding applications in automotive, industrial, and power supply sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFET™ Single |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 30 V |
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