SI5475DDC-T1-GE3
MOSFET P-CH 12V 6A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI5475DDC-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for high-efficiency switching applications. It features a drain-to-source voltage (Vdss) of 12V and a continuous drain current (Id) of 6A at 25°C (Tc). The device offers a low on-resistance (Rds(on)) of 32mOhm maximum at 5.4A and 4.5V Vgs. With a gate charge (Qg) of 50 nC maximum at 8V Vgs and an input capacitance (Ciss) of 1600 pF maximum at 6V Vds, it provides optimized switching performance. This MOSFET is available in an 8-SMD, Flat Leads package, specifically the 1206-8 ChipFET™ from Vishay Siliconix, supplied on tape and reel. Power dissipation is rated at 2.3W (Ta) and 5.7W (Tc). The operating temperature range is -55°C to 150°C. Typical applications include power management, battery charging, and load switching in consumer electronics and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 5.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 5.7W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 6 V |