SI5475DC-T1-E3
MOSFET P-CH 12V 5.5A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5475DC-T1-E3 TrenchFET® P-Channel MOSFET. This device features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.5A at 25°C. The Rds(On) is specified at a maximum of 31mOhm at 5.5A and 4.5V Vgs. Drive voltages for optimal Rds(On) are between 1.8V and 4.5V. The Vishay Siliconix SI5475DC-T1-E3 is packaged in a 1206-8 ChipFET™ surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 29 nC at 4.5V Vgs and a threshold voltage (Vgs(th)) of 450mV maximum at 1mA. The operating temperature range is -55°C to 150°C. This component is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
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