SI5475BDC-T1-E3
MOSFET P-CH 12V 6A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET P-Channel SI5475BDC-T1-E3. This TrenchFET® series device offers a 12 V drain-source voltage and a continuous drain current of 6 A at 25°C. The Rds On is specified at a maximum of 28 mOhm at 5.6 A and 4.5 V gate-source voltage. Featuring a P-Channel MOSFET technology, it operates with a maximum gate-source voltage of ±8 V and a threshold voltage of 1 V at 250 µA. The device provides 1.8 V to 4.5 V drive voltage capability. Maximum power dissipation is 2.5 W (Ta) or 6.3 W (Tc). The SI5475BDC-T1-E3 is supplied in an 8-SMD, Flat Leads package, specifically the 1206-8 ChipFET™ package, and is available on tape and reel. Typical applications include power management and switching in consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 6.3W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 6 V |