SI5473DC-T1-E3
MOSFET P-CH 12V 5.9A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI5473DC-T1-E3, offers a 12V Vds rating and a continuous drain current of 5.9A at 25°C. This device features a low on-resistance of 27mOhm at 5.9A and 4.5V Vgs. The SI5473DC-T1-E3 is housed in a 1206-8 ChipFET™ surface mount package, suitable for demanding applications in the consumer electronics and industrial automation sectors. Key parameters include a gate charge of 32nC at 4.5V Vgs and a maximum power dissipation of 1.3W. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 4.5 V |
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