SI5461EDC-T1-GE3
MOSFET P-CH 20V 4.5A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5461EDC-T1-GE3 is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 4.5A at 25°C. The device exhibits a low on-resistance of 45mOhm at 5A and 4.5V, facilitating efficient power switching. It operates with drive voltages ranging from 1.8V to 4.5V and has a maximum Gate-Source Voltage (Vgs) of ±12V. The Gate Charge (Qg) is specified at 20 nC maximum at 4.5V. The SI5461EDC-T1-GE3 is packaged in an 8-SMD, Flat Leads (1206-8 ChipFET™) format on tape and reel, with a maximum power dissipation of 1.3W (Ta). This MOSFET is suitable for use in power management circuits across various industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |