SI5456DU-T1-GE3
MOSFET N-CH 20V 12A CHIPFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI5456DU-T1-GE3 is a TrenchFET® series N-Channel Power MOSFET. This single FET device features a 20V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). The low on-resistance of 10mOhm at 9.3A and 10V (Rds On) minimizes conduction losses. It is housed in a PowerPAK® ChipFET™ Single surface mount package. Key characteristics include a maximum gate charge (Qg) of 30 nC at 10V and an input capacitance (Ciss) of 1200 pF at 10V. The device supports drive voltages from 4.5V to 10V and operates over a temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 3.1W (Ta) and 31W (Tc). This component finds application in power management solutions across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 9.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFET™ Single |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 10 V |
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