SI5449DC-T1-E3
MOSFET P-CH 30V 3.1A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5449DC-T1-E3 is a P-Channel TrenchFET® MOSFET designed for efficient power switching. This device features a 30V drain-source voltage rating and a continuous drain current capability of 3.1A at 25°C. Its low on-resistance of 85mOhm is achieved at 3.1A and 4.5V Vgs, with drive voltages available at 2.5V and 4.5V. The device is housed in an 8-SMD, Flat Leads package, specifically the 1206-8 ChipFET™ footprint, suitable for surface mounting. With a maximum power dissipation of 1.3W (Ta), it operates across a wide temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power management applications within the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |