SI5448DU-T1-GE3
MOSFET N-CH 40V 25A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5448DU-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This surface mount component offers a 40V drain-source breakdown voltage and a continuous drain current of 25A at 25°C (Tc), with a maximum power dissipation of 31W (Tc). Key parametric data includes a low Rds(on) of 7.75mOhm at 15A and 10V, and a gate charge (Qg) of 20nC at 4.5V. Input capacitance (Ciss) is rated at 1765pF at 20V. The device operates across a temperature range of -55°C to 150°C (TJ) and is supplied in a PowerPAK® ChipFET™ Single package. This component is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.75mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Single |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1765 pF @ 20 V |
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