SI5447DC-T1-GE3
MOSFET P-CH 20V 3.5A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI5447DC-T1-GE3, is a 20V device designed for high-efficiency power switching applications. This surface mount component, housed in an 8-SMD, Flat Leads (1206-8 ChipFET™) package, offers a continuous drain current of 3.5A at 25°C with a maximum power dissipation of 1.3W. Its low on-resistance, specified at 76mOhm maximum at 3.5A and 4.5V Vgs, facilitates reduced conduction losses. The device features a gate charge of 10 nC maximum at 4.5V Vgs, contributing to efficient switching performance. It operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive and industrial power management segments.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 76mOhm @ 3.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
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