SI5446DU-T1-GE3
MOSFET N-CH 30V 25A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI5446DU-T1-GE3 is an N-Channel Power MOSFET designed for demanding power management applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 25A (Tc) at 25°C. The low on-resistance of 6.4mOhm maximum at 10A and 10V Vgs makes it highly efficient for switching and conduction losses. The SI5446DU-T1-GE3 operates with gate drive voltages between 4.5V and 10V, and has a maximum gate charge of 30nC at 10V. With a maximum power dissipation of 31W (Tc), this MOSFET is suitable for use in automotive, industrial, and consumer electronics where robust power switching is essential. The component is housed in a PowerPAK® ChipFET™ Single package for efficient surface mounting and thermal performance, supplied in Tape & Reel (TR).
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Single |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1610 pF @ 15 V |
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