SI5445BDC-T1-E3
MOSFET P-CH 8V 5.2A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5445BDC-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient switching. This device features a drain-source voltage (Vdss) of 8V and a continuous drain current (Id) of 5.2A at 25°C, with a maximum power dissipation of 1.3W. The on-resistance (Rds On) is specified at a maximum of 33mOhm at 5.2A and 4.5V gate-source voltage. It operates with drive voltages between 1.8V and 4.5V and has a gate charge of 21 nC at 4.5V. The SI5445BDC-T1-E3 is available in an 8-SMD, Flat Leads package, specifically the 1206-8 ChipFET™, suitable for surface mount applications. It is rated for an operating temperature range of -55°C to 150°C. This component is utilized in various applications including power management, battery protection, and load switching within consumer electronics and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 5.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
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