SI5441DC-T1-GE3
MOSFET P-CH 20V 3.9A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5441DC-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for efficient power switching. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 3.9A at 25°C ambient. With a maximum on-resistance of 55mOhm at 3.9A and 4.5V gate-source voltage, it offers low conduction losses. The device supports gate drive voltages from 2.5V to 4.5V for optimal performance and has a maximum gate charge of 22nC. Packaged in an 8-SMD, Flat Leads 1206-8 ChipFET™ footprint suitable for surface mounting, it dissipates up to 1.3W. Operating temperature range is -55°C to 150°C. This component is widely utilized in consumer electronics and industrial power management applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 3.9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |