SI5441BDC-T1-GE3
MOSFET P-CH 20V 4.4A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI5441BDC-T1-GE3 is a P-Channel TrenchFET® Power MOSFET designed for efficient switching applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) capability of 4.4A at 25°C, with a maximum power dissipation of 1.3W (Ta). The low on-resistance of 45mOhm is achieved at 4.4A and 4.5V Vgs, with a 2.5V minimum gate drive for Rds On. The SI5441BDC-T1-GE3 utilizes a 1206-8 ChipFET™ package for surface mounting and offers a gate charge (Qg) of 22 nC at 4.5V. It operates across a temperature range of -55°C to 150°C. This component is suitable for use in consumer electronics and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
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