SI5435BDC-T1-GE3
MOSFET P-CH 30V 4.3A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI5435BDC-T1-GE3 is a P-channel MOSFET designed for power switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.3A at 25°C, with a maximum power dissipation of 1.3W (Ta). The Rds(On) is specified at a maximum of 45mOhm at 4.3A and 10V Vgs. It operates with a gate-source voltage (Vgs) range of ±20V, and a threshold voltage (Vgs(th)) of 3V at 250µA. Gate charge (Qg) is a maximum of 24nC at 10V Vgs. This component is housed in an 8-SMD, flat leads package, specifically the 1206-8 ChipFET™ from Vishay Siliconix, and is supplied on tape and reel (TR). The SI5435BDC-T1-GE3 is suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
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