SI5435BDC-T1-E3
MOSFET P-CH 30V 4.3A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5435BDC-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage rating and a continuous drain current capability of 4.3A at 25°C. The device offers low on-resistance, specified at a maximum of 45mOhm at 4.3A and 10V Vgs. It is packaged in an 8-SMD, Flat Leads (1206-8 ChipFET™) footprint for surface mounting. With a maximum power dissipation of 1.3W at 25°C and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for use in power management, consumer electronics, and industrial automation. Key parameters include a gate charge of 24nC at 10V and a gate-source threshold voltage of 3V at 250µA.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
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