SI5433BDC-T1-E3
MOSFET P-CH 20V 4.8A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SI5433BDC-T1-E3 is a P-Channel TrenchFET® power MOSFET. This device features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 4.8 A at 25°C. With a low on-resistance of 37 mOhm maximum at 4.8 A and 4.5 V Vgs, it offers efficient power handling. The device supports gate drive voltages from 1.8 V to 4.5 V, with a maximum gate-source voltage of ±8 V. Its maximum power dissipation is 1.3 W. The SI5433BDC-T1-E3 utilizes a 1206-8 ChipFET™ surface-mount package, ideal for space-constrained applications. This component is commonly found in power management solutions across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 4.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
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