SI5432DC-T1-GE3
MOSFET N-CH 20V 6A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5432DC-T1-GE3 is an N-Channel TrenchFET® MOSFET designed for high-efficiency power switching applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 6A at 25°C case temperature. The low Rds(on) of 20mOhm at 8.3A and 4.5V gate drive ensures minimal conduction losses. Optimized for surface mount integration, it utilizes the 1206-8 ChipFET™ package, offering a compact footprint. Key parameters include a maximum gate charge of 33 nC at 10V and an input capacitance of 1200 pF at 10V. With a power dissipation of 2.5W (ambient) and 6.3W (case), it is suitable for use in power management, battery-powered devices, and industrial control systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 6.3W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 10 V |