SI5424DC-T1-GE3
MOSFET N-CH 30V 6A 1206-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI5424DC-T1-GE3 is an N-Channel TrenchFET® MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 6A at 25°C (Tc). The device boasts a low on-resistance of 24mOhm maximum at 4.8A and a 10V gate-source voltage.
Optimized for thermal performance, the SI5424DC-T1-GE3 offers a maximum power dissipation of 2.5W (Ta) and 6.25W (Tc). It operates with a gate drive voltage range of 4.5V to 10V and has a maximum gate charge of 32nC at 10V. Typical applications include power management in consumer electronics, industrial automation, and automotive systems. The component is supplied in an 8-SMD, Flat Leads package, specifically the 1206-8 ChipFET™ footprint, and is available on tape and reel. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 15 V |
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