SI5415EDU-T1-GE3
MOSFET P-CH 20V 25A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI5415EDU-T1-GE3 is a P-channel TrenchFET® MOSFET designed for power management applications. This single FET features a Drain-to-Source Voltage (Vdss) of 20V and offers a continuous drain current (Id) of 25A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 9.8mOhm maximum at 10A and 4.5V, with a drive voltage range of 1.8V to 4.5V. Key parameters include a maximum gate charge (Qg) of 120 nC at 8V and an input capacitance (Ciss) of 4300 pF maximum at 10V. The SI5415EDU-T1-GE3 is packaged in a PowerPAK® ChipFET™ Single, suitable for surface mount configurations. With a power dissipation of 31W at 25°C (Tc), it is engineered for operation across a wide temperature range of -50°C to 150°C. This component is utilized in industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Single |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.8mOhm @ 10A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Single |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 10 V |
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